High reliability of flexible organic transistor memory looks promising for future electronics
July 9, 2010
Engineers from Kookmin University in Seoul, Korea have demonstrated a flexible memory device based on an organic transistor, which they say could be easily and cheaply integrated, along with transistors and logic circuits, into flexible electronic devices.

(Left) A photograph of the 3 x 3 cm2 flexible organic memory devices. (Right) A diagram of the memory device architecture. (Soo-Jin Kim and Jang-Sik Lee
The memory device can offer controllable threshold voltage for writing and erasing information, storage times of more than a year, and reliability after hundreds of repeated programming/erasing cycles, as well as good flexibility that could endure more than 1,000 repeated bending cycles. Plus, all the fabrication processes could be carried out at low temperatures, enabling lower manufacturing costs.