Rensselaer Polytechnic Institute PhD candidate Weixiao Huang has invented a new transistor that uses gallium nitride (GaN).

The new GaN transistor could reduce the power consumption and improve the efficiency of power electronics systems. Used in experimental MOSFET chips, they have shown superior performance compared to silicon MOSFET in terms of lower power consumption, smaller chip size, and higher power density.

The new transistors can greatly reduce energy loss, making energy conversion more efficient, and can operate in hot, harsh, and high-power environments.