Researchers at the Nano Research Group at the University of Southampton have developed a process to create a high on/off ratio in graphene by making a normally flat transistor similar to a U-shape, but with corners instead of a curve at the bottom. They used a gallium focused ion beam to create U-shaped ribbons of graphene 300 nanometers wide and a few micrometers long.

The new process allows graphene transistors to use less power and therefore be more efficient. It could allow for superfast processing speeds in future supercomputers.

Ref.: arxiv.org/abs/1012.1105v1